IRF640NPBF To-220N channel 200V/18A direct MOSFET mosFEts
产品详情
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Id - Continuous Drain Current: | 18 A |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 44.7 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 150 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Infineon / IR |
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